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InAs/GaSb hosts a broken gap band alignment that has been shown to generate helical topological edge states. Upon the introduction of Mn into the structure, it has been predicted to host a quantized anomalous Hall effect. Here, we show that dilute Mn doping on InAs in InAs/GaSb, allows a tuning of the Fermi level, the introduction of paramagnetism, but also has a non-trivial impact on the band alignment of the system. The measurement of Shubnikov-de-Haas oscillations, cyclotron resonance, and a non-linear Hall effect in Mn-doped samples indicate the coexistence of a high mobility two-dimensional electron gas and a hole gas. Conversely, in undoped InAs/GaSb, pure-n-type transport is observed. We hypothesize that Mn acceptor levels can pin the Fermi energy near the valence band edge of InAs, far from the interface, which introduces a strong band bending to preserve the band offset at the InAs/GaSb interface. The realization of the QAHE in this structure will thus require a careful control of the band alignment to preserve topological insulating character.

We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1-xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe growth predominantly in (001) orientation on GaAs(111) and Bi2Se3, but along (111) crystallographic direction on BaF2 (111) and Pb1-xEuxSe (111). High-resolution transmission electron microscopy measurements reveal an abrupt and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagnetic phases. In contrast to previous studies, we found strong hysteresis for the antiferromagnetic-ferrimagnetic transition. An ability to grow epitaxial films of EuSe on Bi2Se3 and of Bi2Se3 on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator., Comment: 19pages,13 figures

In this paper we report successful synthesis and magnetic properties of (Ca,Na)(Zn,Mn)2Sb2 as a new ferromagnetic dilute magnetic semiconductor (DMS). In this DMS material the concentration of magnetic moments can be controlled independently from the concentration of electric charge carriers that are required for mediating magnetic interactions between these moments. This feature allows us to separately investigate the effect of carriers and of spins on the ferromagnetic properties of this new DMS alloy, and particularly of the critical ferromagnetic behavior. We use modified Arrott plot technique to establish critical exponents b, g, and d of this alloy. We find that at low Mn concentrations (< 10 at.%), it is governed by short-range 3D-Ising behavior, with experimental values of b, g, and d very close to theoretical 3D-Ising values of 0.325, 1.24, and 4.815. However, as the Mn concentration increases, this DMS material exhibits a mixed-phase behavior, with g retaining its 3D-Ising characteristics, but b crossing over to longer-range mean-field behavior., Comment: 28 pages, 6figures, 1 table

MoTe2 is the least explored material in the Molybdenum-chalcogen family, which crystallizes in thermodynamically stable semiconducting 2H phase at \textless 500 C and 1T' metallic phase at higher temperatures. Molecular beam epitaxy (MBE) provides an unique opportunity to tackle the small electronegativity difference between Mo and Te while growing layer by layer away from thermodynamic equilibrium. For a few-layer MoTe2 grown at a moderate rate of $\sim$6 mins per monolayer under varied Te:Mo flux ratio and substrate temperature, the boundary between the 2 phases in MBE grown MoTe2 on CaF2 is characterized using Reflection high-energy electron diffraction (RHEED), Raman spectroscopy and X-ray photoemission spectroscopy (XPS). Grazing incidence X-ray diffraction (GI-XRD) reveals a grain size of $\sim$90 {\AA} and presence of twinned grains. XRD, transmission electron miscroscopy, RHEED, low energy electron diffraction along with lack of electrical conductivity modulation by field effect in MBE 2H-MoTe2 on GaAs (111) B show likelihood of excess Te incorporation in the films. Finally, thermal stability and air sensitivity of MBE 2H-MoTe2 is investigated by temperature dependent XRD and XPS, respectively., Comment: Six figure in main tex, 8 figures in SI and 4 tables in main text

Perovksite semiconductors have shown promise for low-cost solar cells, lasers and photodetectors, yet their fundamental photophysical properties are not well understood. Recent observations of a low ($\sim$few meV) exciton binding energy and evidence of hot phonon effects in the room temperature phase suggest that perovskites are much closer to inorganic semiconductors than the absorber layers in traditional organic photovoltaics, signaling the need for experiments that shed light on the placement of perovskite materials within the spectrum of semiconductors used in optoelectronics and photovoltaics. Here we use four-wave mixing (FWM) to contrast the coherent optical response of CH$_3$NH$_3$PbI$_3$ thin films and crystalline GaAs. At carrier densities relevant for solar cell operation, our results show that carriers interact surprisingly weakly via the Coulomb interaction in perovskite, much weaker than in inorganic semiconductors. These weak many-body effects lead to a dephasing time in CH$_3$NH$_3$PbI$_3$ $\sim$3 times longer than in GaAs. Our results also show that the strong enhancement of the exciton FWM signal tied to excitation-induced dephasing in GaAs and other III-V semiconductors does not occur in perovskite due to weak exciton-carrier scattering interactions., Comment: Added 10 K results to previous version (Feb 16, 2016)

We present a study of photo-excited magnetization dynamics in ferromagnetic (Ga,Mn)As films observed by time-resolved magneto-optical measurements. The magnetization precession triggered by linearly polarized optical pulses in the absence of an external field shows a strong dependence on photon frequency when the photo-excitation energy approaches the band-edge of (Ga,Mn)As. This can be understood in terms of magnetic anisotropy modulation by both laser heating of the sample and by hole-induced non-thermal paths. Our findings provide a means for identifying the transition of laser-triggered magnetization dynamics from thermal to non-thermal mechanisms, a result that is of importance for ultrafast optical spin manipulation in ferromagnetic materials via non-thermal paths., Comment: 11 pages, 9 figures

We report the structural and optical properties of molecular beam epitaxy (MBE) grown 2-dimensional (2D) material molybdenum diselenide (MoSe2) on graphite, CaF2 and epitaxial graphene. Extensive characterizations reveal that 2H- MoSe2 grows by van-der-Waals epitaxy on all 3 substrates with a preferred crystallographic orientation and a Mo:Se ratio of 1:2. Photoluminescence at room temperature (~1.56 eV) is observed in monolayer MoSe2 on both CaF2 and epitaxial graphene. The band edge absorption is very sharp, <60 meV over 3 decades. Overcoming the observed small grains by promoting mobility of Mo atoms would make MBE a powerful technique to achieve high quality 2D materials and heterostructures., Comment: 5 Figures in main paper and 6 figures in supplementary information

We directly measure the hole spin lifetime in ferromagnetic GaMnAs via time- and polarization-resolved spectroscopy. Below the Curie temperature Tc, an ultrafast photoexcitation with linearly-polarized light is shown to create a non-equilibrium hole spin population via the dynamical polarization of holes through p-d exchange scattering with ferromagnetically-ordered Mn spins, and we characterize their relaxation dynamics. The observed relaxation consists of a distinct three-step recovery : (i) femtosecond (fs) hole spin relaxation ~ $160-200 fs, (ii) picosecond (ps) hole energy relaxation ~ 1-2 ps, and (iii) a coherent, damped Mn spin precession with a period of ~ 250 ps. The transient amplitude of the hole spin component diminishes with increasing temperature, directly following the ferromagnetic order, while the hole energy amplitude shows negligible temperature change, consistent with our interpretation. Our results thus establish the hole spin lifetimes in ferromagnetic semiconductors and demonstrate a novel spectroscopy method for studying non-equilibrium hole spins in the presence of correlation and magnetic order.

Topological superconductors which support Majorana fermions are thought to be realized in one-dimensional semiconducting wires coupled to a superconductor. Such excitations are expected to exhibit non-Abelian statistics and can be used to realize quantum gates that are topologically protected from local sources of decoherence. Here we report the observation of the fractional a.c. Josephson effect in a hybrid semiconductor/superconductor InSb/Nb nanowire junction, a hallmark of topological matter. When the junction is irradiated with a radio-frequency f in the absence of an external magnetic field, quantized voltage steps (Shapiro steps) with a height hf/2e are observed, as is expected for conventional superconductor junctions, where the supercurrent is carried by charge-2e Cooper pairs. At high magnetic fields the height of the first Shapiro step is doubled to hf/e, suggesting that the supercurrent is carried by charge-e quasiparticles. This is a unique signature of Majorana fermions, elusive particles predicted ca. 80 years ago., Comment: the original manuscript submission date is March 20, 2012

We present a detailed investigation of exchange-dominated nonpropagating spin-wave modes in a series of 100 nm Ga$_{1 - x}$Mn$_{x}$As films with Mn concentrations $x$ ranging from 0.02 to 0.08. The angular and Mn concentration dependences of spin wave resonance modes have been studied for both as-grown and annealed samples. Our results indicate that the magnetic anisotropy terms of Ga$_{1 - x}$Mn$_{x}$As depend on the Mn concentration $x$, but are also strongly affected by sample growth conditions; moreover, the magnetic anisotropy of Ga$_{1 - x}$Mn$_{x}$As films is found to be clearly linked to the Curie temperature. The spin wave resonance spectra consist of a series of well resolved standing spin-wave modes. The observed mode patterns are consistent with the Portis volume-inhomogeneity model, in which a spatially nonuniform anisotropy field acts on the Mn spins. The analysis of these exchange-dominated spin wave modes, including their angular dependences, allows us to establish the exchange stiffness constants for Ga$_{1 - x}$Mn$_{x}$As films., Comment: 4 pages, 3 figures